New York, July 24, 2023 (GLOBE NEWSWIRE) — Reportlinker.com announces the release of the report “RF Gallium Nitride Market by Device, wafer size, end user and Region – Global Forecast to 2028” – https://www.reportlinker.com/p06478546/?utm_source=GNWThe Integrated RF device segment is also expected to grow at a higher CAGR during the forecast period.RF GaN integrated devices have reformed the field of RF and microwave electronics, offering improved power density, efficiency, and linearity.Additionally, the 200 and above segment is expected to grow at a higher CAGR during the forecast period.A wafer size of 200 mm and above can be processed more quickly and efficiently than smaller wafer sizes.The satellite communication segment is expected to grow at a highest CAGR during the forecast period.RF GaN technology provides scalability for future satellite communication systems.North America is also expected to witness the highest CAGR during the forecast period.Governments in North America are also supporting the growth of the RF GaN market through various initiatives.The study contains insights from various industry experts, ranging from component suppliers to Tier 1 companies and OEMs. The break-up of the primaries is as follows:
• By Company Type – Tier 1 – 35%, Tier 2 – 45%, Tier 3 – 20%
• By Designation— C-level Executives – 40%, Marketing Directors – 30%, Others – 30%
• By Region—North America – 20%, Europe – 40%, Asia Pacific – 30%, RoW – 10%The report segments the RF GaN market and forecasts its size by device type, wafer size, end-use, and region.The report also discusses the drivers, restraints, opportunities, and challenges pertaining to the market.• Analysis Of key drivers (Advantage of GaN over traditional SI, heightened demand from consumers and enterprises and automotive vertical for power electronics devices, continuous emergence of technologies in GaN ecosystem, suitability of GaN in RF applications, and increasing adoption of GaN RF semiconductor devices for military, defense, and aerospace applications). Restraint ( Higher efficacy of alternatives such as Silicon Carbide (SiC) for high-voltage semiconductor applications). Opportunity (Evolving renewable energy applications of GaN, potential use of GaN in 6G infrastructure development, applications in electric and hybrid electric vehicles, consolidating trend of smart manufacturing). Challenges (High material and fabrication costs, complexities associated with designing of electrical layout of GaN devices )
• Product Development/Innovation: Detailed insights on upcoming technologies, research & development activities, and new product launches in the RF GaN market
• Market Development: Comprehensive information about lucrative markets – the report analyses the RF GaN market across varied regions
• Market Diversification: Exhaustive information about new products & services, untapped geographies, recent developments, and investments in the RF GaN market.
• Competitive Assessment: In-depth assessment of market shares, growth strategies, and service offerings of leading players like Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US), Infineon Technologies AG (Germany), ROHM Co., Ltd. (Japan), Texas Instruments Incorporated (Texas), Toshiba Corporation (Japan), STMicroelectronics N.V. (Switzerland) among others in the GaN market.
Read the full report: https://www.reportlinker.com/p06478546/?utm_source=GNWReportLinker is an award-winning market research solution. Reportlinker finds and organizes the latest industry data so you get all the market research you need – instantly, in one place.
(GlobeNewsWire)